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Product shot of Wolfspeed's RF earless flange H-37248C-4 package.
High Power RF GaN on SiC HEMT 235 W; 48 V; 3700 – 4100 MHz

The GTRA412852FC is a 235-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching; high efficiency; and a thermally-enhanced package with earless flange.

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Frequency Min
Frequency Max
P3dB Output Power
Operating Voltage
Package Type
GaN on SiC
3.7 GHz
4.1 GHz
235 W
11.5 dB
48 V
  • GaN on SiC HEMT technology
  • Input and output matched
  • Typical pulsed CW performance; 4100 MHz; 48 V; 10 µs pulse width; 100 µs PP
    • Output power at P3dB = 235 W
    • Gain = 10 dB
    • Efficiency = 45%
  • Capable of handling 10:1 VSWR @48 V; 30 W (WCDMA) output power
  • Human Body Model Class 1A (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant

Multi-standard Cellular Power Amplifiers

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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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