GTRA412852FC V1


Product shot of Wolfspeed's RF earless flange H-37248C-4 package.
High Power RF GaN on SiC HEMT 235 W; 48 V; 3700 – 4100 MHz

The GTRA412852FC is a 235-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching; high efficiency; and a thermally-enhanced package with earless flange.

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Frequency Min
Frequency Max
P3dB Output Power
Operating Voltage
Package Type
GaN on SiC
3.7 GHz
4.1 GHz
235 W
11.5 dB
48 V
  • GaN on SiC HEMT technology
  • Input and output matched
  • Typical pulsed CW performance; 4100 MHz; 48 V; 10 µs pulse width; 100 µs PP
    • Output power at P3dB = 235 W
    • Gain = 10 dB
    • Efficiency = 45%
  • Capable of handling 10:1 VSWR @48 V; 30 W (WCDMA) output power
  • Human Body Model Class 1A (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant

Multi-standard Cellular Power Amplifiers

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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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