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GTRA412852FC V1

GTRA412852FC-V1

h-37248c-4_7
High Power RF GaN on SiC HEMT 235 W; 48 V; 3700 – 4100 MHz

The GTRA412852FC is a 235-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching; high efficiency; and a thermally-enhanced package with earless flange.

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Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRA412852FC-V1
Yes
GaN on SiC
3.7 GHz
4.1 GHz
235 W
11.5 dB
45%
48 V
Earless
Product SKU
Buy Online
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRA412852FC-V1
Yes
GaN on SiC
3.7 GHz
4.1 GHz
235 W
11.5 dB
45%
48 V
Earless
Features
  • GaN on SiC HEMT technology
  • Input and output matched
  • Typical pulsed CW performance; 4100 MHz; 48 V; 10 µs pulse width; 100 µs PP
    • Output power at P3dB = 235 W
    • Gain = 10 dB
    • Efficiency = 45%
  • Capable of handling 10:1 VSWR @48 V; 30 W (WCDMA) output power
  • Human Body Model Class 1A (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant
Applications

Multi-standard Cellular Power Amplifiers

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