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GTRB186002FC-V1

Product shot of Wolfspeed's RF earless flange H-37248C-4 package.
High Power RF GaN on SiC HEMT 500 W, 48 V, 1805 – 1880 MHz

The GTRB186002FC is a 500-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.

GTRB186002FC-V1

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Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRB186002FC-V1
Yes
GaN on SiC
1.805 GHz
1.88 GHz
500 W
15.7 dB
54%
48 V
Earless
Features
  • GaN on SiC HEMT technology
  • Typical Pulsed CW performance, 1880 MHz, 48 V, 10 μs pulse width, 10% duty cycle, combined outputs
    • Output power at P3dB = 500 W
    • Efficiency at P3dB = 68%
  • Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
  • Pb-free and RoHS compliant

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