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GTRB226002FC-V1

Product shot of Wolfspeed's RF earless flange H-37248C-4 package.
High Power RF GaN on SiC HEMT 450 W, 48 V, 2110 – 2200 MHz

The GTRB226002FC is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRB226002FC-V1
Yes
GaN on SiC
2.11 GHz
2.2 GHz
450 W
15 dB
60%
48 V
Earless
Features
  • GaN on SiC HEMT technology
  • Typical pulsed CW performance: 10 μs pulse width, 10% duty cycle, 2200 MHz, 48 V, Doherty fixture
    • Efficiency = 65%
    • Gain = 14 dB
    • Output power at P3dB = 450 W
  • Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant
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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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