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GTRB264318FC-V1

H-37248KC-6-2 package type with Wolfspeed logo
High Power RF GaN on SiC HEMT 400 W; 48 V; 2500 – 2700 MHz
The GTRB264318FC is a 400-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features internal matching; high efficiency; and a thermally-enhanced package with earless flange.

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GTRB264318FC-V1

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GTRB264318FC-V1

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Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRB264318FC-V1
Yes
GaN on SiC
2.5 GHz
2.7 GHz
400 W
14 dB
50%
48 V
Earless
Features
  • GaN on SiC HEMT technology
  • Broadband internal matching
  • Typical pulsed CW performance: 10 μs pulse width; 10% duty cycle; 2675 MHz; 48 V; Doherty fixture
    • Gain = 15 dB @ 47.2 dBm
    • Efficiency = 53% @ 47.2 dBm
    • Output power at P3dB = 400 W
  • Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant
Applications
  • Multi-standard cellular power amplifier applications

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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

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