Skip to Main Content
Contact
浏览产品 (中文)

GTRB264318FC-V1

H-37248KC-6-2 package type with Wolfspeed logo
High Power RF GaN on SiC HEMT 400 W; 48 V; 2500 – 2700 MHz

The GTRB264318FC is a 400-watt (P3dB) GaN on Sic high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features internal matching; high efficiency; and a thermally-enhanced package with earless flange.

GTRB264318FC-V1

Product SKU
Buy Online
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRB264318FC-V1
Yes
GaN on SiC
2.5 GHz
2.7 GHz
400 W
14 dB
50%
48 V
Earless
Features
  • GaN on SiC HEMT technology
  • Broadband internal matching
  • Typical pulsed CW performance: 10 μs pulse width; 10% duty cycle; 2675 MHz; 48 V; Doherty fixture
    • Gain = 15 dB @ 47.2 dBm
    • Efficiency = 53% @ 47.2 dBm
    • Output power at P3dB = 400 W
  • Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant
Applications
  • Multi-standard cellular power amplifier applications

Documents

Apply Filters
Document Type
Document Name
Product Catalog
Sales Sheets & Flyers
Sales Terms
Need information?
Buy Online
Find a Distributor
Stay Informed

Knowledge Center

View All
RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Continue Reading 
 Technical Articles

Footer

Wolfspeed Logo

Social Media

  • Facebook
  • Twitter
  • LinkedIn
  • YouTube
Copyright © 2023 Wolfspeed, Inc.