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GTRB266502FC-V1

Product shot of Wolfspeed's RF earless flange H-37248C-4 package.
High Power RF GaN on SiC HEMT 630 W, 48 V, 2620 – 2690 MHz

The GTRB266502FC is a 630-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi- standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRB266502FC-V1
New
Yes
GaN on SiC
2.62 GHz
2.69 GHz
630 W
14 dB
49%
48 V
Earless
Features

Typical Pulsed CW performance, 2690 MHz, 48V, 10 μs pulse width, 10% duty cycle, combined outputs

  • Output power at P3dB = 630 W
  • Efficiency at P3dB = 67%
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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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