Skip to Main Content
Contact
浏览产品 (中文)

GTRB266502FC-V1

Product shot of Wolfspeed's RF earless flange H-37248C-4 package.
High Power RF GaN on SiC HEMT 630 W, 48 V, 2620 – 2690 MHz

The GTRB266502FC is a 630-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi- standard cellular power amplifier applications. It features high efficiency, and a thermally-enhanced package with earless flange.

GTRB266502FC-V1

Product SKU
Buy Online
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTRB266502FC-V1
New
Yes
GaN on SiC
2.62 GHz
2.69 GHz
630 W
14 dB
49%
48 V
Earless
Features

Typical Pulsed CW performance, 2690 MHz, 48V, 10 μs pulse width, 10% duty cycle, combined outputs

  • Output power at P3dB = 630 W
  • Efficiency at P3dB = 67%

Documents

Apply Filters
Document Type
Document Name
Application Notes
Product Catalog
Sales Sheets & Flyers
Sales Terms
Need information?
Buy Online
Find a Distributor
Stay Informed

Knowledge Center

View All
RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Continue Reading 
 Technical Articles

Footer

Wolfspeed Logo

Social Media

  • Facebook
  • Twitter
  • LinkedIn
  • YouTube
Copyright © 2023 Wolfspeed, Inc.