Features
- GaN on SiC HEMT Technology
- Asymmetric Doherty Design
- Pout(avg): 47.5 dBm
- Pout(3dB): 56.4 dBm
- Pb-free and RoHS compliant
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | P3dB Output Power | Gain | Efficiency | Operating Voltage | Package Type | Design Files |
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GTRB384608FC-V1 | Yes | GaN on SiC | 3.3 GHz | 3.8 GHz | 440 W | 12.3 dB | 41 % | 48 V | Earless |
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