Features
- GaN on SiC HEMT Technology
- Asymmetric Doherty Design
- Pout(avg): 47.5 dBm
- Pout(3dB): 56.4 dBm
- Pb-free and RoHS compliant
GTRB384608FC-V1
High Power RF GaN on SiC HEMT 440 W, 48 V, 3300 – 3800 MHz
Preliminary Information:
The GTRB384608FC is a 440-watt (P3dB), GaN on SiC high electron mobility transistor (HEMT) designed for use in frequency band n78 cellular amplifiers applications.
Products
GTRB384608FC-V1
No filters selected, showing all 1 products
GTRB384608FC-V1
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | P3dB Output Power | Gain | Efficiency | Operating Voltage | Package Type | Design Files |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
GTRB384608FC-V1 | Yes | GaN on SiC | 3.3 GHz | 3.8 GHz | 440 W | 12.3 dB | 41 % | 48 V | Earless |
Applications
- n78 cellular transmitters amplifiers
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Apply Filters
Document Type | Document Name |
|---|---|
| Application Notes | |
| Product Catalog | |
| Sales Sheets & Flyers | |
| Sales Terms |
Knowledge Center
Wolfspeed RF GaN meets 5G demands on PA design
Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
Resolving mMIMO PA Design Challenges
Massive multiple-input-multiple output (mMIMO) system designers are being challenged to improve system efficiency. Balancing wideband linearity with efficiency is a requirement to fit the size, weight, and power requirements of mMIMO systems. View the whitepaper from Wolfspeed and Analog Devices.