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High Power RF GaN on SiC HEMT 270 W; 48 V; 2110 – 2200 MHz

The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequecy band. It features input matching; high efficiency; and a thermally-enhanced earless package.

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Frequency Min
Frequency Max
P3dB Output Power
Operating Voltage
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GaN on SiC
1.8 GHz
2.2 GHz
300 W
19 dB
48 V
  • Input matched
  • Typical Pulsed CW performance; 2180 MHz; 48 V; 10% duty cycle
  • Output power P3dB 300 W
  • Efficiency 68.5%
  • Gain 17.5 dB
  • Capable of handling 10:1 VSWR @ 48 V; 56.2 W (WCDMA) output power
  • Pb-free and RoHS compliant
  • Multi-standard Cellular Power Amplifiers
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by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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