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GTVA262711FA V2

GTVA262711FA-V2

High Power RF GaN on SiC HEMT 300 W; 48 V; 2620 – 2690 MHz

The GTVA262711FA is a 300-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTVA262711FA-V2
Yes
GaN on SiC
2.62 GHz
2.69 GHz
300 W
18 dB
39%
48 V
Earless
Features
  • Input matched
  • Typical Pulsed CW performance; 2690 MHz; 48 V; 10% duty cycle
  • Output power P3dB 300 W
  • Efficiency 62 %
  • Gain 19.1 dB
  • Capable of handling 10:1 VSWR @ 48 V; 70 W (CW) output power
  • Pb-free and RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers
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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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