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GTVA262711FA-V2

High Power RF GaN on SiC HEMT 300 W; 48 V; 2620 – 2690 MHz

The GTVA262711FA is a 300-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally-enhanced package with earless flange.

GTVA262711FA-V2

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Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
GTVA262711FA-V2
Yes
GaN on SiC
2.62 GHz
2.69 GHz
300 W
18 dB
39%
48 V
Earless
Features
  • Input matched
  • Typical Pulsed CW performance; 2690 MHz; 48 V; 10% duty cycle
  • Output power P3dB 300 W
  • Efficiency 62 %
  • Gain 19.1 dB
  • Capable of handling 10:1 VSWR @ 48 V; 70 W (CW) output power
  • Pb-free and RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers

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