Features
- Input matched
- Typical Pulsed CW performance; 2690 MHz; 48 V; combined outputs
- Output power P3dB 340 W
- Efficiency 70 %
- Gain 16 dB
- Capable of handling 10:1 VSWR @ 48 V; 80 W (CW) output power
- Pb-free and RoHS compliant
GTVA263202FC-V1
High Power RF GaN on SiC HEMT 340 W; 48 V; 2620 – 2690 MHz
The GTVA263202FC is a 340-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermally enhanced surface-mount package with earless flange.
Products
GTVA263202FC-V1
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GTVA263202FC-V1
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | P3dB Output Power | Gain | Efficiency | Operating Voltage | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|
GTVA263202FC-V1 | Yes | GaN on SiC | 2.3 GHz | 2.7 GHz | 340 W | 17 dB | 40% | 48 V | Earless |
Applications
- Multi-standard Cellular Power Amplifiers
Documents, Tools & Support
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Documents
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Document Type | Document Name |
|---|---|
| Application Notes | |
| Data Sheets | |
| Reference Designs | |
| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
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| Product Catalog | |
| Sales Sheets & Flyers | |
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Knowledge Center
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