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PTAC210802FC V1

PTAC210802FC-V1

High Power RF LDMOS FET 80 W; 28 V; 1805 – 2170 MHz
NOTE: Discontinued.

The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. Features include dual-path design; input matching; high gain and thermally enhanced package with earless flange. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
PTAC210802FC-V1
Discontinued
LDMOS
1.805 GHz
2.17 GHz
80 W
16 dB
43%
28 V
Earless
Features
  • Input matched
  • Typical Pulsed CW performance; 2170 MHz; 28 V (Doherty fixture)
  • Output power P3dB 75 W
  • Efficiency 48 %
  • Gain 14 dB
  • Capable of handling 10:1 VSWR @ 28 V; 80 W (CW) output power
  • Pb-free and RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers
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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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