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PTFC210202FC V1

PTFC210202FC-V1

High Power RF LDMOS FET 28 W; 28 V; 1800 – 2200 MHz
NOTE: Not recommended for new designs.

The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

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Technology
Frequency Min
Frequency Max
p3DbOutputPower
Gain
Efficiency
Operating Voltage
Package Type
PTFC210202FC-V1
No
LDMOS
1.8 GHz
2.2 GHz
21 dB
29%
28 V
Earless
Features
  • Input matched
  • Typical CW performance; 2170 MHz; 28 V; combined outputs: Output power at P1dB = 28 W; Efficiency = 62%; Gain = 20.9 dB
  • Capable of handling 10:1 VSWR @28 V; 28 W (CW) output power
  • Integrated ESD protection: Human Body Model; Class 1C (per JESD22-A114)
  • Low thermal resistance
  • Pb-free and RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers
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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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