Skip to Main Content
Contact
浏览产品 (中文)

PTFC210202FC-V1

High Power RF LDMOS FET 28 W; 28 V; 1800 – 2200 MHz
NOTE: Not recommended for new designs.

The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

PTFC210202FC-V1

Product SKU
Buy Online
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
PTFC210202FC-V1
No
LDMOS
1.8 GHz
2.2 GHz
28 W
21 dB
29%
28 V
Earless
Features
  • Input matched
  • Typical CW performance; 2170 MHz; 28 V; combined outputs: Output power at P1dB = 28 W; Efficiency = 62%; Gain = 20.9 dB
  • Capable of handling 10:1 VSWR @28 V; 28 W (CW) output power
  • Integrated ESD protection: Human Body Model; Class 1C (per JESD22-A114)
  • Low thermal resistance
  • Pb-free and RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers

Documents

Apply Filters
Document Type
Document Name
Application Notes
Data Sheets
Reference Designs
Product Catalog
Sales Sheets & Flyers
Sales Terms
Need information?
Buy Online
Find a Distributor
Stay Informed

Knowledge Center

View All
RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Continue Reading 
 Technical Articles

Footer

Wolfspeed Logo

Social Media

  • Facebook
  • Twitter
  • LinkedIn
  • YouTube
Copyright © 2023 Wolfspeed, Inc.