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PTFC270101M V1

PTFC270101M-V1

High Power RF LDMOS FET 10 W; 28 V; 900 – 2700 MHz
NOTE: Not recommended for new designs.

The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain; efficiency and linearity performance in a small overmolded plastic package.

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Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
PTFC270101M-V1
No
LDMOS
0.9 GHz
2.7 GHz
12 W
20 dB
60%
28 V
Surface Mount
Features
  • Unmatched input and output
  • Typical CW performance; 2170 MHz; 28 V: Output power @ P1dB = 10 W; Gain = 20 dB; Efficiency = 60%
  • Typical two-carrier WCDMA performance; 2170 MHz; 28 V; 8 dB PAR: Output power = 1.3 W avg; Gain = 21 dB; Efficiency = 21%; ACPR = –44.9 dBc @ 5 MHz
  • Capable of handling 10:1 VSWR @ 28 V; 10 W (CW) output power
  • Integrated ESD protection
  • Pb-free and RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers
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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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