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PTFC270101M-V1

High Power RF LDMOS FET 10 W; 28 V; 900 – 2700 MHz
NOTE: Not recommended for new designs.

The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain; efficiency and linearity performance in a small overmolded plastic package.

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Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
PTFC270101M-V1
No
LDMOS
0.9 GHz
2.7 GHz
12 W
20 dB
60%
28 V
Surface Mount
Features
  • Unmatched input and output
  • Typical CW performance; 2170 MHz; 28 V: Output power @ P1dB = 10 W; Gain = 20 dB; Efficiency = 60%
  • Typical two-carrier WCDMA performance; 2170 MHz; 28 V; 8 dB PAR: Output power = 1.3 W avg; Gain = 21 dB; Efficiency = 21%; ACPR = –44.9 dBc @ 5 MHz
  • Capable of handling 10:1 VSWR @ 28 V; 10 W (CW) output power
  • Integrated ESD protection
  • Pb-free and RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers
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Knowledge Center

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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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