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PTMC210404MD-V2

Wideband LDMOS Two-stage Integrated Power Amplifier 2 x 20 W; 28 V; 1805 – 2200 MHz
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The PTMC210204MD is a wideband; two-stage LDMOS integrated amplifier intended for wideband driver applications. It has internal matching for operation from 1805 to 2200 MHz. It features on-chip matching high efficiency; and dual independent outputs with 20 W of output power each. It is available in a 14-lead plastic overmold package with gull wing leads.

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
PTMC210404MD-V2
Yes
LDMOS
1.8 GHz
2.2 GHz
37 W
30 dB
18.5%
28 V
Surface Mount
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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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