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High Power RF LDMOS FET; 615 W; 48 V; 730 – 960 MHz

The PTRA084858NF is a 615-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 730 to 960 MHz frequency band. Features include input and output matching; high gain and a thermally-enhanced plastic overmold package for cool and reliable operation. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

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Frequency Min
Frequency Max
P3dB Output Power
Operating Voltage
Package Type
0.73 GHz
0.96 GHz
615 W
19 dB
48 V
  • Broadband input and output matching
  • Asymmetric Doherty design
    • Main: P1dB = 211 W Typ
    • Peak: P1dB = 468 W Typ
  • Typical pulsed CW performance: 10 μs pulse width; 10% duty cycle; 820 MHz; 48 V; Doherty fixture
    • Gain = 19.5 dB
    • Efficiency = 52%
    • Output power at P1dB = 214 W
    • Output power at P3dB = 615 W

Multi-standard cellular power amplifiers

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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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