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PXAE183708NB V1

PXAE183708NB-V1

High Power RF LDMOS FET 320 W; 28 V; 1805 – 1880 MHz

The PXAE183708NB is a 320-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
PXAE183708NB-V1
Yes
LDMOS
1.8 GHz
2.2 GHz
315 W
16 dB
50.50%
28 V
Plastic
Features
  • Broadband internal input and output matching
  • Asymmetrical Doherty design: Main P3dB = 160 W Typ; Peak P3dB = 315 W Typ
  • Typical Pulsed CW performance; 1880 MHz; 28 V; Doherty configuration; Class AB (main); Class C (peak): Output power at P1dB = 320 W; Output power at P3dB = 430 W; Drain efficiency = 60%; Gain = 13.5 dB
  • Capable of handling 10:1 VSWR @ 28 V; 54 W (1C WCDMA) output power
  • Pb-free; RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers
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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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