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High Power RF LDMOS FET 175 W; 28 V; 1805 – 1880 MHz
NOTE: Not recommended for new designs.

The PXFE181507FC is a 175-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

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Frequency Min
Frequency Max
P3dB Output Power
Operating Voltage
Package Type
1.805 GHz
1.88 GHz
222 W
20 dB
28 V
  • Broadband internal input and output matching
  • Typical Pulsed CW performance; 1842 MHz; 28 V; single side; class AB test: Output power at P1dB = 175 W; Output power at P3dB = 222 W; Efficiency at P3dB = 60%; Gain = 21.3 dB
  • Capable of handling 10:1 VSWR @ 28 V; 180 W (CW) output power
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Multi-standard Cellular Power Amplifiers
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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