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38.5 dBm GaN on SiC Power Amplifier Module; 2496-2690 MHz
The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC technology with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 2496 MHz to 2690 MHz. It uses a supply voltages of up to 50 V at maximum; average output power levels of 6 to 8 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of up to 200 MHz. The device is housed in a 6 mm X 6 mm land grid array (LGA) package.



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Frequency Min
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GaN on SiC
2.496 GHz
2.69 GHz
50 W
16.5 dB
48 V
Surface Mount
  • GaN on SiC technology
  • Gate bias supplies for main and peaking sub-amplifiers from either side of the device
  • Integrated harmonic terminations
  • Pb-free and RoHS compliant
  • Recommended driver is the WSGPA01
  • Multi-standard Cellular Power Amplifiers

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