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WS1A3640-V1

39.5 dBm GaN on SiC Power Amplifier Module; 3300-3800 MHz

The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 3300 MHz to 3800 MHz; from supply voltages up to 50 V; at average output power levels of 8 to 10 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of 200 MHz or more. The device is housed in a 6 mm X 6 mm land grid array (LGA) package.

WS1A3640-V1

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Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
WS1A3640-V1-R3K
Yes
GaN on SiC
3.3 GHz
3.8 GHz
60 W
13.5 dB
52%
48 V
Surface Mount
Features
  • GaN on SiC technology
  • Gate bias supplies for main and peaking sub-amplifiers from either side of the device
  • Integrated harmonic terminations
  • Pb-free and RoHS compliant
  • Recommended driver is the WSGPA01
Applications
  • Multi-standard Cellular Power Amplifiers

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