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WS1A3940-V1

39.5 dBm GaN on SiC Power Amplifier Module; 3700-3980 MHz

The WS1A3940 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The PAM has been designed to operate from 3700 MHz to 3980 MHz; from supply voltages up to 50 V; at average output power levels of 8 to 10 W with crest-factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of 200 MHz or more. The device is housed in a 6 mm X 6 mm land grid array (LGA) package.

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
WS1A3940-V1-R3K
Yes
GaN on SiC
3.7 GHz
3.98 GHz
60 W
13 dB
52%
48 V
Surface Mount
Features
  • GaN on SiC technology
  • Gate bias supplies for main and peaking sub-amplifiers from either side of the device
  • Integrated harmonic terminations
  • Pb-free and RoHS compliant
  • Recommended driver is the WSGPA01
Applications
  • Multi-standard Cellular Power Amplifiers
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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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