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RF
X-Band
Wolfspeed’s GaN on SiC solutions are well suited for pulsed and CW X-Band applications. With a variety of power levels, high gain/stage and high power-added efficiency (PAE), Wolfspeed’s solutions support continuous improvements in SWAP-C benchmarks. The best-in-class performance demonstrated by many of these devices is driving the next generation of marine, ground and airborne radar platforms such as weather, air-traffic control, fire-control, as well as other defense and commercial based systems. And, Wolfspeed’s versatile packaging capabilities provide several options for our customers to implement these solutions into various types of systems, while managing critical factors such as thermals.
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X-Band
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Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CMPA851A005S New | Yes | GaN on SiC | 8.5 GHz | 10.5 GHz | 4.5 W | 31 dB | 28 V | Packaged MMIC | Plastic | |||||
Yes | GaN on SiC | 8.5 GHz | 9.6 GHz | 6 W | >7 dB | 52% | 40 V | Evaluation Board | Surface Mount | |||||
Yes | GaN on SiC | DC | 15 GHz | 6 W | >7 dB | 52% | 40 V | Packaged Discrete Transistor | Surface Mount | |||||
Yes | GaN on SiC | DC | 18 GHz | 6 W | 17 dB | 60% | 40 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | 8.5 GHz | 10 GHz | 20 W | 29 dB | 28 V | Packaged MMIC | Plastic | ||||||
CMPA851A012D New | Yes | GaN on SiC | 8.5 GHz | 10 GHz | 20 W | 28 dB | 28 V | MMIC Bare Die | Die | |||||
CMPA851A012S New | Yes | GaN on SiC | 8.5 GHz | 10 GHz | 20 W | 29 dB | 28 V | Packaged MMIC | Plastic | |||||
Yes | GaN on SiC | 8.9 GHz | 9.6 GHz | 25 W | 11 dB | 51% | 40 V | Evaluation Board | Surface Mount | |||||
Yes | GaN on SiC | DC | 15 GHz | 25 W | 11 dB | 51% | 40 V | Packaged Discrete Transistor | Surface Mount | |||||
Yes | GaN on SiC | 6 GHz | 12 GHz | 25 W | 33 dB | 32% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | 6 GHz | 12 GHz | 25 W | 33 dB | 32% | 28 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | DC | 18 GHz | 25 W | 17 dB | 60% | 40 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | 6 GHz | 12 GHz | 25 W | 32 dB | 32% | 28 V | MMIC Bare Die | Die | |||||
Yes | GaN on SiC | 9 GHz | 10 GHz | 35 W | 30 dB | 45% | 28 V | Packaged MMIC | Plastic | |||||
Yes | GaN on SiC | 9 GHz | 10 GHz | 35 W | 27 dB | 45% | 40 V | Evaluation Board | Plastic | |||||
Yes | GaN on SiC | 8 GHz | 12 GHz | 35 W | 19 dB | 36% | 28 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | 9 GHz | 10 GHz | 35 W | 27 dB | 45% | 40 V | Packaged MMIC | Plastic | |||||
Yes | GaN on SiC | 9 GHz | 10 GHz | 35 W | 30 dB | 45% | 28 V | Packaged MMIC | Plastic | |||||
Yes | GaN on SiC | 8.5 GHz | 10.5 GHz | 40 W | 29.5 dB | 28 V | Packaged MMIC | Plastic | ||||||
CMPA851A025D New | Yes | GaN on SiC | 8.5 GHz | 10.5 GHz | 40 W | 30 dB | 28 V | MMIC Bare Die | Die | |||||
CMPA851A025S New | Yes | GaN on SiC | 8.5 GHz | 10.5 GHz | 40 W | 29.5 dB | 28 V | Packaged MMIC | Plastic | |||||
Yes | GaN on SiC | 9 GHz | 10 GHz | 40 W | 34 dB | 38% | 28 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | 8 GHz | 11 GHz | 40 W | 28 dB | 42% | 28 V | MMIC Bare Die | Die | |||||
Yes | GaN on SiC | 9 GHz | 10 GHz | 40 W | 34 dB | 35% | 28 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | 9 GHz | 10 GHz | 40 W | 34 dB | 35% | 28 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | 7.9 GHz | 11 GHz | 40 W | 27 dB | 40% | 28 V | Packaged MMIC | Plastic | |||||
Yes | GaN on SiC | 8.5 GHz | 10.5 GHz | 50 W | 29 dB | 28 V | Packaged MMIC | Flange | ||||||
CMPA851A050F New | Yes | GaN on SiC | 8.5 GHz | 10.5 GHz | 50 W | 29 dB | 28 V | Packaged MMIC | Flange | |||||
Yes | GaN on SiC | 8.4 GHz | 9.6 GHz | 50 W | 10 dB | 55% | 40 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | 7.9 GHz | 9.6 GHz | 50 W | 10 dB | 55% | 40 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | DC | 18 GHz | 70 W | 17 dB | 60% | 40 V | Discrete Bare Die | Die | |||||
Yes | GaN on SiC | 8.5 GHz | 10.5 GHz | 80 W | 29 dB | 28 V | Packaged MMIC | Surface Mount | ||||||
CMPA851A050S New | Yes | GaN on SiC | 8.5 GHz | 10.5 GHz | 80 W | 29 dB | 28 V | Packaged MMIC | Surface Mount | |||||
CMPA851A050D New | Yes | GaN on SiC | 8.5 GHz | 10.5 GHz | 80 W | 29 dB | 28 V | MMIC Bare Die | Die | |||||
Yes | GaN on SiC | 7.9 GHz | 9.6 GHz | 100 W | 10 dB | 45% | 40 V | Evaluation Board | Flange | |||||
Yes | GaN on SiC | 7.9 GHz | 9.6 GHz | 100 W | 10 dB | 45% | 40 V | Packaged Discrete Transistor | Flange | |||||
Yes | GaN on SiC | 8.4 GHz | 9.6 GHz | 130 W | 42% | 40 V | Packaged Discrete Transistor | Flange | ||||||
Yes | GaN on SiC | 8.8 GHz | 9.6 GHz | 300 W | 12 dB | 40% | 45 V | Packaged Discrete Transistor | Flange | |||||
CGHV1A250F New | Yes | GaN on SiC | 8.8 GHz | 9.6 GHz | 300 W | 12 dB | 40% | 45 V | Packaged Discrete Transistor | Flange |
Knowledge Center
Wolfspeed RF GaN meets 5G demands on PA design
Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
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Improving Pulse Fidelity in RF Power Amplifiers
A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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