GaN on SiC solutions for pulsed & CW X-Band applications

X-Band

Wolfspeed’s GaN on SiC solutions are well suited for pulsed and CW X-Band applications. With a variety of power levels, high gain/stage and high power-added efficiency (PAE), Wolfspeed’s solutions support continuous improvements in SWAP-C benchmarks. Thereby driving the next generation of marine, ground and airborne radar platforms such as weather, air-traffic control, fire-control, as well as other defense and commercial based systems.

Product SKU	Recommended For New Design?	Technology	Frequency Min	Frequency Max	Peak Output Power	Gain	Efficiency	Operating Voltage	Form	Package Type
CGHV1F006S-AMP3	Yes	GaN on SiC	8.5 GHz	9.6 GHz	6 W	>7 dB	52%	40 V	Evaluation Board	Surface Mount
CGHV1F006S	Yes	GaN on SiC	DC	15 GHz	6 W	>7 dB	52%	40 V	Packaged Discrete Transistor	Surface Mount
CGHV1J006D-GP4	Yes	GaN on SiC	DC	18 GHz	6 W	17 dB	60%	40 V	Discrete Bare Die	Die
CMPA801B025F	No	GaN on SiC	8 GHz	11 GHz	25 W	16 dB	36%	28 V	Packaged MMIC	Flange
CMPA801B025D	No	GaN on SiC	8 GHz	11 GHz	25 W	28 dB	45%	28 V	MMIC Bare Die	Die
CGHV1F025S-AMP1	Yes	GaN on SiC	8.9 GHz	9.6 GHz	25 W	11 dB	51%	40 V	Evaluation Board	Surface Mount
CGHV1F025S	Yes	GaN on SiC	DC	15 GHz	25 W	11 dB	51%	40 V	Packaged Discrete Transistor	Surface Mount
CMPA601C025F-AMP	Yes	GaN on SiC	6 GHz	12 GHz	25 W	33 dB	32%	28 V	Evaluation Board	Flange
CMPA601C025F	Yes	GaN on SiC	6 GHz	12 GHz	25 W	33 dB	32%	28 V	Packaged MMIC	Flange
CGHV1J025D-GP4	Yes	GaN on SiC	DC	18 GHz	25 W	17 dB	60%	40 V	Discrete Bare Die	Die
CMPA601C025D	Yes	GaN on SiC	6 GHz	12 GHz	25 W	32 dB	32%	28 V	MMIC Bare Die	Die
CMPA801B025F-AMP	No	GaN on SiC	8 GHz	11 GHz	25 W	16 dB	36%	28 V	Evaluation Board	Flange
CMPA801B025P	No	GaN on SiC	8 GHz	11 GHz	25 W	16 dB	36%	28 V	Packaged MMIC	Pill
CMPA801B030F	No	GaN on SiC	8 GHz	11 GHz	30 W	16 dB	36%	28 V	Packaged MMIC	Flange
CMPA801B030F-AMP	Yes	GaN on SiC	8 GHz	11 GHz	30 W	16 dB	36%	28 V	Evaluation Board	Flange
CMPA901A020S-AMP1	Yes	GaN on SiC	9 GHz	10 GHz	35 W	30 dB	45%	28 V	Packaged MMIC	Plastic
CMPA9396025S-AMP1	Yes	GaN on SiC	9 GHz	10 GHz	35 W	27 dB	45%	40 V	Evaluation Board	Plastic
CMPA801B030F1	Yes	GaN on SiC	8 GHz	12 GHz	35 W	19 dB	36%	28 V	Packaged MMIC	Flange
CMPA9396025S	Yes	GaN on SiC	9 GHz	10 GHz	35 W	27 dB	45%	40 V	Packaged MMIC	Plastic
CMPA901A020S	Yes	GaN on SiC	9 GHz	10 GHz	35 W	30 dB	45%	28 V	Packaged MMIC	Plastic
CMPA901A035F1	Yes	GaN on SiC	9 GHz	10 GHz	40 W	34 dB	38%	28 V	Packaged MMIC	Flange
CMPA801B030D1	Yes	GaN on SiC	8 GHz	11 GHz	40 W	28 dB	42%	28 V	MMIC Bare Die	Die
CMPA901A035F-AMP	Yes	GaN on SiC	9 GHz	10 GHz	40 W	34 dB	35%	28 V	Evaluation Board	Flange
CMPA901A035F	Yes	GaN on SiC	9 GHz	10 GHz	40 W	34 dB	35%	28 V	Packaged MMIC	Flange
CMPA801B030S	Yes	GaN on SiC	7.9 GHz	11 GHz	40 W	27 dB	40%	28 V	Packaged MMIC	Plastic
CGHV96050F2-AMP	Yes	GaN on SiC	8.4 GHz	9.6 GHz	50 W	10 dB	55%	40 V	Evaluation Board	Flange
CGHV96050F2	Yes	GaN on SiC	7.9 GHz	9.6 GHz	50 W	10 dB	55%	40 V	Packaged Discrete Transistor	Flange
CGHV1J070D-GP4	Yes	GaN on SiC	DC	18 GHz	70 W	17 dB	60%	40 V	Discrete Bare Die	Die
CGHV96100F2-AMP	Yes	GaN on SiC	7.9 GHz	9.6 GHz	100 W	10 dB	45%	40 V	Evaluation Board	Flange
CGHV96100F2	Yes	GaN on SiC	7.9 GHz	9.6 GHz	100 W	10 dB	45%	40 V	Packaged Discrete Transistor	Flange
CGHV96130F	Yes	GaN on SiC	8.4 GHz	9.6 GHz	130 W		42%	40 V	Packaged Discrete Transistor	Flange

Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Technical Articles

Communications Infrastructure

Wolfspeed RF GaN meets 5G demands on PA design

Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.

Technical Articles

Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.

Technical Articles

X-Band

Products

X-Band

X-Band

Knowledge Center

Thermal Considerations for High-Power GaN RF Amplifiers

Wolfspeed RF GaN meets 5G demands on PA design

Improving Pulse Fidelity in RF Power Amplifiers