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X-Band

Wolfspeed’s GaN on SiC solutions are well suited for pulsed and CW X-Band applications. With a variety of power levels, high gain/stage and high power-added efficiency (PAE), Wolfspeed’s solutions support continuous improvements in SWAP-C benchmarks. Thereby driving the next generation of marine, ground and airborne radar platforms such as weather, air-traffic control, fire-control, as well as other defense and commercial based systems.
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X-Band
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Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA9396025S-AMP1
Yes
GaN on SiC
9 GHz
10 GHz
35 W
27 dB
45%
40 V
Evaluation Board
Plastic
Yes
GaN on SiC
8 GHz
12 GHz
35 W
19 dB
36%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
8.4 GHz
9.6 GHz
130 W
42%
40 V
Packaged Discrete Transistor
Flange
No
GaN on SiC
8 GHz
11 GHz
30 W
16 dB
36%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
8 GHz
11 GHz
28 dB
42%
28 V
MMIC Bare Die
No
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
36%
28 V
Packaged MMIC
Flange
No
GaN on SiC
8 GHz
11 GHz
25 W
28 dB
45%
28 V
MMIC Bare Die
Die
Yes
GaN on SiC
7.9 GHz
9.6 GHz
100 W
10 dB
45%
40 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
7.9 GHz
9.6 GHz
50 W
10 dB
55%
40 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
9 GHz
10 GHz
40 W
34 dB
35%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
7.9 GHz
9.6 GHz
100 W
10 dB
NA
40 V
Evaluation Board
Flange
Yes
GaN on SiC
8.4 GHz
9.6 GHz
50 W
10 dB
NA
40 V
Evaluation Board
Flange
Yes
GaN on SiC
9 GHz
10 GHz
40 W
34 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
6 GHz
12 GHz
25 W
33 dB
32%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
6 GHz
12 GHz
25 W
33 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
15 GHz
6 W
>7 dB
52%
40 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
DC
15 GHz
25 W
11 dB
51%
40 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
8.5 GHz
9.6 GHz
6 W
>7 dB
NA
40 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
8.9 GHz
9.6 GHz
25 W
11 dB
NA
40 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
9 GHz
10 GHz
35 W
30 dB
45%
28 V
Packaged MMIC
Plastic
Yes
GaN on SiC
9 GHz
10 GHz
35 W
27 dB
45%
40 V
Packaged MMIC
Plastic
Yes
GaN on SiC
7.9 GHz
11 GHz
40 W
27 dB
40%
28 V
Packaged MMIC
Plastic
Yes
GaN on SiC
18 GHz
70 W
17 dB
60%
40 V
Discrete Bare Die
Die
Yes
GaN on SiC
18 GHz
25 W
17 dB
60%
40 V
Discrete Bare Die
Die
Yes
GaN on SiC
18 GHz
6 W
17 dB
60%
40 V
Discrete Bare Die
Die
Yes
GaN on SiC
6 GHz
12 GHz
25 W
32 dB
32%
28 V
MMIC Bare Die
Die
Yes
GaN on SiC
8 GHz
11 GHz
30 W
16 dB
NA
28 V
Evaluation Board
Flange
No
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
36%
28 V
Packaged MMIC
Pill
No
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
9 GHz
10 GHz
40 W
34 dB
38%
28 V
Packaged MMIC
Flange
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
Yes
GaN on SiC
9 GHz
10 GHz
35 W
27 dB
45%
40 V
Evaluation Board
Plastic
Yes
GaN on SiC
8 GHz
12 GHz
35 W
19 dB
36%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
8.4 GHz
9.6 GHz
130 W
42%
40 V
Packaged Discrete Transistor
Flange
No
GaN on SiC
8 GHz
11 GHz
30 W
16 dB
36%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
8 GHz
11 GHz
28 dB
42%
28 V
MMIC Bare Die
No
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
36%
28 V
Packaged MMIC
Flange
No
GaN on SiC
8 GHz
11 GHz
25 W
28 dB
45%
28 V
MMIC Bare Die
Die
Yes
GaN on SiC
7.9 GHz
9.6 GHz
100 W
10 dB
45%
40 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
7.9 GHz
9.6 GHz
50 W
10 dB
55%
40 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
9 GHz
10 GHz
40 W
34 dB
35%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
7.9 GHz
9.6 GHz
100 W
10 dB
NA
40 V
Evaluation Board
Flange
Yes
GaN on SiC
8.4 GHz
9.6 GHz
50 W
10 dB
NA
40 V
Evaluation Board
Flange
Yes
GaN on SiC
9 GHz
10 GHz
40 W
34 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
6 GHz
12 GHz
25 W
33 dB
32%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
6 GHz
12 GHz
25 W
33 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
15 GHz
6 W
>7 dB
52%
40 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
DC
15 GHz
25 W
11 dB
51%
40 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
8.5 GHz
9.6 GHz
6 W
>7 dB
NA
40 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
8.9 GHz
9.6 GHz
25 W
11 dB
NA
40 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
9 GHz
10 GHz
35 W
30 dB
45%
28 V
Packaged MMIC
Plastic
Yes
GaN on SiC
9 GHz
10 GHz
35 W
27 dB
45%
40 V
Packaged MMIC
Plastic
Yes
GaN on SiC
7.9 GHz
11 GHz
40 W
27 dB
40%
28 V
Packaged MMIC
Plastic
Yes
GaN on SiC
18 GHz
70 W
17 dB
60%
40 V
Discrete Bare Die
Die
Yes
GaN on SiC
18 GHz
25 W
17 dB
60%
40 V
Discrete Bare Die
Die
Yes
GaN on SiC
18 GHz
6 W
17 dB
60%
40 V
Discrete Bare Die
Die
Yes
GaN on SiC
6 GHz
12 GHz
25 W
32 dB
32%
28 V
MMIC Bare Die
Die
Yes
GaN on SiC
8 GHz
11 GHz
30 W
16 dB
NA
28 V
Evaluation Board
Flange
No
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
36%
28 V
Packaged MMIC
Pill
No
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
9 GHz
10 GHz
40 W
34 dB
38%
28 V
Packaged MMIC
Flange
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Recommendations for Improving Pulse Fidelity in RF Power Amplifiers

Join Scott Blum, RF Applications Engineer with Wolfspeed as he discusses how to design areas of a pulsed amplifier circuit to achieve a high degree of pulse fidelity. Also, what parts of the amplifier circuit help or hurt the pulse fidelity and how the parts of the amplifier circuit are best designed.
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