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X-Band

Wolfspeed’s GaN on SiC solutions are well suited for pulsed and CW X-Band applications. With a variety of power levels, high gain/stage and high power-added efficiency (PAE), Wolfspeed’s solutions support continuous improvements in SWAP-C benchmarks. Thereby driving the next generation of marine, ground and airborne radar platforms such as weather, air-traffic control, fire-control, as well as other defense and commercial based systems.
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Data Sheet
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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA901A035F-AMP
Yes
GaN on SiC
9 GHz
10 GHz
40 W
34 dB
NA
28 V
Evaluation Board
Flange
No
GaN on SiC
8 GHz
11 GHz
30 W
16 dB
36%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
8 GHz
11 GHz
28 dB
42%
28 V
MMIC Bare Die
No
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
36%
28 V
Packaged MMIC
Pill
No
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
8 GHz
11 GHz
30 W
16 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
6 GHz
12 GHz
25 W
32 dB
32%
28 V
MMIC Bare Die
Die
Yes
GaN on SiC
18 GHz
6 W
17 dB
60%
40 V
Discrete Bare Die
Die
Yes
GaN on SiC
18 GHz
25 W
17 dB
60%
40 V
Discrete Bare Die
Die
Yes
GaN on SiC
18 GHz
70 W
17 dB
60%
40 V
Discrete Bare Die
Die
CMPA901A020S
New
Yes
GaN on SiC
9 GHz
10 GHz
35 W
30 dB
45%
28 V
Packaged MMIC
Plastic
Yes
GaN on SiC
7.9 GHz
11 GHz
40 W
27 dB
40%
28 V
Packaged MMIC
Plastic
Yes
GaN on SiC
9 GHz
10 GHz
35 W
27 dB
45%
40 V
Packaged MMIC
Plastic
Yes
GaN on SiC
6 GHz
12 GHz
25 W
33 dB
32%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
6 GHz
12 GHz
25 W
33 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
15 GHz
6 W
>7 dB
52%
40 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
DC
15 GHz
25 W
11 dB
51%
40 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
8.5 GHz
9.6 GHz
6 W
>7 dB
NA
40 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
8.9 GHz
9.6 GHz
25 W
11 dB
NA
40 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
7.9 GHz
9.6 GHz
100 W
10 dB
45%
40 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
7.9 GHz
9.6 GHz
50 W
10 dB
55%
40 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
9 GHz
10 GHz
40 W
34 dB
35%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
7.9 GHz
9.6 GHz
100 W
10 dB
NA
40 V
Evaluation Board
Flange
Yes
GaN on SiC
8.4 GHz
9.6 GHz
50 W
10 dB
NA
40 V
Evaluation Board
Flange
No
GaN on SiC
8 GHz
11 GHz
25 W
28 dB
45%
28 V
MMIC Bare Die
Die
No
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
36%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
8.4 GHz
9.6 GHz
130 W
42%
40 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
8 GHz
12 GHz
35 W
19 dB
36%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
9 GHz
10 GHz
40 W
34 dB
38%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
9 GHz
10 GHz
35 W
27 dB
45%
40 V
Packaged MMIC
Plastic
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
Yes
GaN on SiC
9 GHz
10 GHz
40 W
34 dB
NA
28 V
Evaluation Board
Flange
No
GaN on SiC
8 GHz
11 GHz
30 W
16 dB
36%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
8 GHz
11 GHz
28 dB
42%
28 V
MMIC Bare Die
No
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
36%
28 V
Packaged MMIC
Pill
No
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
8 GHz
11 GHz
30 W
16 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
6 GHz
12 GHz
25 W
32 dB
32%
28 V
MMIC Bare Die
Die
Yes
GaN on SiC
18 GHz
6 W
17 dB
60%
40 V
Discrete Bare Die
Die
Yes
GaN on SiC
18 GHz
25 W
17 dB
60%
40 V
Discrete Bare Die
Die
Yes
GaN on SiC
18 GHz
70 W
17 dB
60%
40 V
Discrete Bare Die
Die
Yes
GaN on SiC
9 GHz
10 GHz
35 W
30 dB
45%
28 V
Packaged MMIC
Plastic
Yes
GaN on SiC
7.9 GHz
11 GHz
40 W
27 dB
40%
28 V
Packaged MMIC
Plastic
Yes
GaN on SiC
9 GHz
10 GHz
35 W
27 dB
45%
40 V
Packaged MMIC
Plastic
Yes
GaN on SiC
6 GHz
12 GHz
25 W
33 dB
32%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
6 GHz
12 GHz
25 W
33 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
DC
15 GHz
6 W
>7 dB
52%
40 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
DC
15 GHz
25 W
11 dB
51%
40 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
8.5 GHz
9.6 GHz
6 W
>7 dB
NA
40 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
8.9 GHz
9.6 GHz
25 W
11 dB
NA
40 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
7.9 GHz
9.6 GHz
100 W
10 dB
45%
40 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
7.9 GHz
9.6 GHz
50 W
10 dB
55%
40 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
9 GHz
10 GHz
40 W
34 dB
35%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
7.9 GHz
9.6 GHz
100 W
10 dB
NA
40 V
Evaluation Board
Flange
Yes
GaN on SiC
8.4 GHz
9.6 GHz
50 W
10 dB
NA
40 V
Evaluation Board
Flange
No
GaN on SiC
8 GHz
11 GHz
25 W
28 dB
45%
28 V
MMIC Bare Die
Die
No
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
36%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
8.4 GHz
9.6 GHz
130 W
42%
40 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
8 GHz
12 GHz
35 W
19 dB
36%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
9 GHz
10 GHz
40 W
34 dB
38%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
9 GHz
10 GHz
35 W
27 dB
45%
40 V
Packaged MMIC
Plastic
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Knowledge Center

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GaN on SiC

Thermal Considerations for X-Band MMICs Under CW Operation

Join Kasyap Patel of Wolfspeed for a live webinar on September 20th as we discuss GaN on SiC MMIC solutions to thermal concerns for next generation radar systems during continuous wave (CW) operation.
Register Now 
 Webinars
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GaN on SiC

RF Power Amplification 101: Amplifier Classes

The purpose of the RF PA is to increase the power of the RF input signal. This is achieved by applying the signal to the gate. This article compares some of the common amplifier classes, starting with the most-linear but least-efficient Class A to the still-linear (due to the ideal transistor) but more-efficient Class F and inverse-F.
Continue Reading 
 Technical Articles
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GaN on SiC

RF Power Amplification 101: Waveform Basics

RF power is delivered by the power amplifier (PA), the final stage of amplification before the antenna, with each application placing on the PA its own set of requirements in terms of frequency, bandwidth, load, power, efficiency, and linearity. This article is the first in a series that will discuss these considerations.
Continue Reading 
 Technical Articles
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