Features
- Psat: 300 W
- DE: 40 %
- LSG: 12 dB
- S21: 15 dB
- S11: -9 dB
- S22: -7 dB
CGHV1A250
8.8 - 9.6 GHz, 300 W, 45 V, Packaged GaN Transistor
Wolfspeed’s CGHV1A250F is a 300 W packaged transistor fully matched to 50 ohms at both input and output ports. Utilizing Wolfspeed’s high performance, 45 V, 0.25 um GaN on SiC production process, the CGHV1A250F operates from 8.8 - 9.6 GHz. It targets pulsed radar applications such a marine, defense and weather radar. The CGHV1A250F typically achieves 300 W of saturated output power with 12 dB of large signal gain and 40% drain efficiency under pulsed operation.
Products
CGHV1A250
No filters selected, showing all 2 products
CGHV1A250
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
CGHV1A250F-AMP New | Yes | GaN on SiC | 8.8 GHz | 9.6 GHz | 300 W | 12 dB | 40% | 45 V | Packaged Discrete Transistor | Flange | ||
CGHV1A250F New | Yes | GaN on SiC | 8.8 GHz | 9.6 GHz | 300 W | 12 dB | 40% | 45 V | Packaged Discrete Transistor | Flange |
Benefits
- Double the output power of our prior generation, in the same package
- Higher gain eases adoption and margin for multi-kW systems
- Thermal management enhanced with high efficiency solutions
Applications
- Marine
- Defense
- Weather Radar
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
Documents
Document Type | Document Name |
|---|---|
| Application Notes | |
| Design Files | |
| Data Sheets | |
| S-parameters | |
| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
|
| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Tina McNulty – Jeff B. Barner – Jim Milligan and John Palmour
This paper reports the reliability performance of the Wolfspeed – GaN/AlGaN HEMT MMIC process technology – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
|
| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
|
| Technical Papers & Articles | by Ildu Kim – Jangheon Kim – Junghwan Moon – Jungjoon Kim – and Bumman Kim
Demonstrating a highly efficient Hybrid Envelope Elimination and Restoration transmitter for IEEE 802.16e Mobile WiMAX applications using a highly efficient saturated Power Amplifier (PA). For the optimum H-EER operation – the PA has been designed to have a maximum PAE at the average Vds region by using 10 W (P3dB ) GaN High Electron Mobility Transistor.
|
| Product Catalog | |
| Sales Terms |
Knowledge Center
Continue Reading Technical Articles
Wolfspeed RF GaN meets 5G demands on PA design
Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
Continue Reading Technical Articles
SiC vs GaN vs Si: Find The Right Fit For Your Application
Explore Wolfspeed Silicon Carbide Power and GaN on Silicon Carbide RF solutions to enable your high performance systems.
Continue Reading Infographic