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Wolfspeed CGHV1F025S surface mount package
25-W; DC – 15-GHz; 40-V; GaN HEMT
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Wolfspeed’s CGHV1F025S is an unmatched; gallium-nitride (GaN); high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities. The device can be deployed for L; S; C; X and Ku-band amplifier applications. The data sheet specifications are based on an X-Band (8.9 – 9.6-GHz) amplifier. The CGHV1F025S operates on a 40-volt rail circuit while housed in a 3-mm x 4-mm; surface-mount; dual-flat-no-lead (DFN) package. Under reduced power; the transistor can operate below 40-V to as low as 20-V VDD; maintaining high gain and efficiency.



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Frequency Min
Frequency Max
Peak Output Power
Operating Voltage
Package Type
GaN on SiC
8.9 GHz
9.6 GHz
25 W
11 dB
40 V
Evaluation Board
Surface Mount
GaN on SiC
15 GHz
25 W
11 dB
40 V
Packaged Discrete Transistor
Surface Mount
  • Up to 15 GHz Operation
  • 25 W Typical Output Power
  • 11 dB Gain at 9.4 GHz
  • Application circuit for 8.9 – 9.6 GHz
  • L; S; C; X and Ku-Band amplifiers

Documents, Tools & Support


Document Type
Document Name
Application Notes
Application Notes
Application Notes
Design Files
Data Sheets
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Donald A. Gajewski – Wolfspeed
Randall D. Lewis – Northrop Grumman Corp.
Benjamin M. Decker – Northrop Grumman Corp.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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Knowledge Center

Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Continue Reading  Technical Articles

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
Continue Reading  Technical Articles


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