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50-W; 7.9 – 9.6-GHz; 50-ohm; Input/Output-Matched GaN HEMT
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Wolfspeed’s CGHV96050F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.

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Frequency Min
Frequency Max
Peak Output Power
Operating Voltage
Package Type
GaN on SiC
8.4 GHz
9.6 GHz
50 W
10 dB
40 V
Evaluation Board
GaN on SiC
7.9 GHz
9.6 GHz
50 W
10 dB
40 V
Packaged Discrete Transistor
  • 8.4 – 9.6 GHz Operation
  • 80 W POUT typical
  • 10 dB Power Gain
  • 55 % Typical PAE
  • 50 Ohm Internally Matched
  • <0.1 dB Power Droop
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Technical Papers & Articles
by Donald A. Gajewski – Wolfspeed
Randall D. Lewis – Northrop Grumman Corp.
Benjamin M. Decker – Northrop Grumman Corp.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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Knowledge Center

Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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