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CGHV96100

CGHV96100

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100-W; 7.9 – 9.6-GHz; 50-ohm; Input/Output-Matched; GaN HEMT Power Amplifier
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Wolfspeed’s CGHV96100F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.

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Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV96100F2
Yes
GaN on SiC
7.9 GHz
9.6 GHz
100 W
10 dB
45%
40 V
Packaged Discrete Transistor
Flange
CGHV96100F2-AMP
Yes
GaN on SiC
7.9 GHz
9.6 GHz
100 W
10 dB
NA
40 V
Evaluation Board
Flange
Product SKU
Buy Online
Request Sample
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CGHV96100F2
Yes
GaN on SiC
7.9 GHz
9.6 GHz
100 W
10 dB
45%
40 V
Packaged Discrete Transistor
Flange
CGHV96100F2-AMP
Yes
GaN on SiC
7.9 GHz
9.6 GHz
100 W
10 dB
NA
40 V
Evaluation Board
Flange
Features
  • 8.4 – 9.6 GHz Operation
  • 145 W POUT typical
  • 10 dB Power Gain
  • 40% Typical PAE
  • 50 Ohm Internally Matched
  • <0.3 dB Power Droop
Applications
  • Marine Radar
  • Weather Monitoring
  • Air Traffic Control
  • Maritime Vessel Traffic Control
  • Port Security
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Document Type
Document Name
Application Notes
Application Notes
Application Notes
Data Sheets
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Yifeng Wu and Primit Parikh – The vacuum tubes used in today’s millimeter-wave transmitters face an increasing threat from GaN HEMTs. Cree’s Yifang Wu and Primit Parikh are leading the GaN charge with designs that incorporate field plates – iron-doped buffer layers and a thin AIN interlayer to deliver a record power at 30 GHz.
Technical Papers & Articles
by Donald A. Gajewski – Cree – Inc.
Randall D. Lewis – Northrop Grumman Corp.
Benjamin M. Decker – Northrop Grumman Corp.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Ecology
CGHV37400F – CGHV50200F – CGHV59350F – CGHV96050F1 – CGHV96050F2 – CGHV96100F2 – CGHV96130F
Product Ecology
CGHV37400F – CGHV50200F – CGHV59350F – CGHV96050F1 – CGHV96050F2 – CGHV96100F2,
CGHV96130F
Product Ecology
CGHV35400F – CGHV96050F3 – CGHV96100F4
Product Catalog
Sales Terms
Document Type
Document Name
Application Notes
Application Notes
Application Notes
Data Sheets
Technical Papers & Articles
by Raymond S. Pengelly – William Pribble – Thomas Smith
This Simulation of power amplifiers (PAs) for modern wireless base station and small cell systems is an essential part of the design process. At a cell site – the PA consumes the bulk of the dc power – generates the most heat – and thus represents the greatest operational cost. Maximum PA efficiency is a necessity to manage these costs – which is a sizeable challenge in a PA that also must be highly linear to support the complex multilevel modulation types and wide bandwidths used for current and developing wireless transmission standards. Accurate simulation allows the PA designer to meet these challenges by exploring the available design options and then optimizing the circuit that is selected for the application.
Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Yifeng Wu and Primit Parikh – The vacuum tubes used in today’s millimeter-wave transmitters face an increasing threat from GaN HEMTs. Cree’s Yifang Wu and Primit Parikh are leading the GaN charge with designs that incorporate field plates – iron-doped buffer layers and a thin AIN interlayer to deliver a record power at 30 GHz.
Technical Papers & Articles
by Donald A. Gajewski – Cree – Inc.
Randall D. Lewis – Northrop Grumman Corp.
Benjamin M. Decker – Northrop Grumman Corp.
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
Product Ecology
CGHV37400F – CGHV50200F – CGHV59350F – CGHV96050F1 – CGHV96050F2 – CGHV96100F2 – CGHV96130F
Product Ecology
CGHV37400F – CGHV50200F – CGHV59350F – CGHV96050F1 – CGHV96050F2 – CGHV96100F2,
CGHV96130F
Product Ecology
CGHV35400F – CGHV96050F3 – CGHV96100F4
Product Catalog
Sales Terms
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