Features
- 28 dB Small Signal Gain
- 35 W Typical PSAT
- Operation up to 28 V
- High Breakdown Voltage
- High Temperature Operation
CMPA801B025
25 W; 8.0 – 11.0 GHz; GaN MMIC Power Amplifier
Note: CMPA801B025 is Discontinued. Refer to CMPA801B030F1/S
Wolfspeed’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. It is available in a die; 10-lead metal/ceramic flanged package (CMPA801B025F) or small form-factor pill package (CMPA801B025P) for optimal electrical and thermal performance.
Products
CMPA801B025
No filters selected, showing all 4 products
CMPA801B025
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
CMPA801B025F-AMP | No | GaN on SiC | 8 GHz | 11 GHz | 25 W | 16 dB | 36% | 28 V | Evaluation Board | Flange | ||
CMPA801B025P | No | GaN on SiC | 8 GHz | 11 GHz | 25 W | 16 dB | 36% | 28 V | Packaged MMIC | Pill | ||
CMPA801B025D | No | GaN on SiC | 8 GHz | 11 GHz | 25 W | 28 dB | 45% | 28 V | MMIC Bare Die | Die | ||
CMPA801B025F | No | GaN on SiC | 8 GHz | 11 GHz | 25 W | 16 dB | 36% | 28 V | Packaged MMIC | Flange |
Applications
- Point to Point Radio
- Communications
- Test Instrumentation
- EMC Amplifiers
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Apply Filters
Document Type | Document Name |
|---|---|
| Design Files | |
| Application Notes | |
| Application Notes | |
| Application Notes | |
| Data Sheets | |
| Data Sheets | |
| Technical Papers & Articles | by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
|
| Technical Papers & Articles | by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
|
| Technical Papers & Articles | by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
|
| Product Catalog | |
| Sales Terms |
Knowledge Center
Wolfspeed RF GaN meets 5G demands on PA design
Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
SiC vs GaN vs Si: Find The Right Fit For Your Application
Explore Wolfspeed Silicon Carbide Power and GaN on Silicon Carbide RF solutions to enable your high performance systems.