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CMPA801B025

CMPA801B025

25 W; 8.0 – 11.0 GHz; GaN MMIC Power Amplifier

Note: CMPA801B025 is Discontinued. Refer to CMPA801B030F1/S

Wolfspeed’s CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. It is available in a die; 10-lead metal/ceramic flanged package (CMPA801B025F) or small form-factor pill package (CMPA801B025P) for optimal electrical and thermal performance.

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA801B025F-AMP
No
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
NA
28 V
Evaluation Board
Flange
CMPA801B025P
No
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
36%
28 V
Packaged MMIC
Pill
CMPA801B025D
No
GaN on SiC
8 GHz
11 GHz
25 W
28 dB
45%
28 V
MMIC Bare Die
Die
CMPA801B025F
No
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
36%
28 V
Packaged MMIC
Flange
Features
  • 28 dB Small Signal Gain
  • 35 W Typical PSAT
  • Operation up to 28 V
  • High Breakdown Voltage
  • High Temperature Operation
Applications
  • Point to Point Radio
  • Communications
  • Test Instrumentation
  • EMC Amplifiers
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Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
by Donald A. Gajewski – Scott Sheppard – Simon Wood – Jeff B. Barner – Jim Milligan – and John Palmour.
This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies – fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
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RF
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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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