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CMPA801B030

30 W; 8.0 - 11.0 GHz; GaN MMIC; Power Amplifier

Wolfspeed’s CMPA801B030 family of X-band MMIC amplifiers operate over the 7.9 – 11 GHz frequency range supporting satellite communications along with both civil and defense-related radar applications. Generating 40W of typical output power; with >20dB of large-signal gain and 40% power-added efficiency; this product family offers high performance across various platforms providing the user flexibility to integrate the right product into their system architecture.

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
CMPA801B030F-AMP
Yes
GaN on SiC
8 GHz
11 GHz
30 W
16 dB
36%
28 V
Evaluation Board
Flange
CMPA801B030S
Yes
GaN on SiC
7.9 GHz
11 GHz
40 W
27 dB
40%
28 V
Packaged MMIC
Plastic
CMPA801B030D1
Yes
GaN on SiC
8 GHz
11 GHz
40 W
28 dB
42%
28 V
MMIC Bare Die
Die
CMPA801B030F
No
GaN on SiC
8 GHz
11 GHz
30 W
16 dB
36%
28 V
Packaged MMIC
Flange
CMPA801B030F1
Yes
GaN on SiC
8 GHz
12 GHz
35 W
19 dB
36%
28 V
Packaged MMIC
Flange
Features
  • 40 W Typical PSAT
  • Operation up to 28 V
  • High Breakdown Voltage
  • High Temperature Operation
Applications
  • Point to Point Radio
  • Communications
  • Test Instrumentation
  • EMC Amplifiers
  • Radar
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Technical Papers & Articles
by Raymond S. Pengelly – Simon M. Wood – James W. Milligan – Scott T. Sheppard – and William L. Pribble
Technical Papers & Articles
by Jeremy K. Fisher – Donald A. Gajewski – Thomas J. Smith
Technical Papers & Articles
Technical Papers & Articles
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Knowledge Center

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RF
|
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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 Technical Articles

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