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封装类型
CGHV1F006S-AMP3
Yes
GaN on SiC
8.5 GHz
9.6 GHz
6 W
>7 dB
NA
40 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
DC
15 GHz
6 W
>7 dB
52%
40 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
DC
18 GHz
6 W
17 dB
60%
40 V
Discrete Bare Die
Die
No
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
36%
28 V
Packaged MMIC
Flange
No
GaN on SiC
8 GHz
11 GHz
25 W
28 dB
45%
28 V
MMIC Bare Die
Die
Yes
GaN on SiC
8.9 GHz
9.6 GHz
25 W
11 dB
NA
40 V
Evaluation Board
Surface Mount
Yes
GaN on SiC
DC
15 GHz
25 W
11 dB
51%
40 V
Packaged Discrete Transistor
Surface Mount
Yes
GaN on SiC
6 GHz
12 GHz
25 W
33 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
6 GHz
12 GHz
25 W
33 dB
32%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
DC
18 GHz
25 W
17 dB
60%
40 V
Discrete Bare Die
Die
Yes
GaN on SiC
6 GHz
12 GHz
25 W
32 dB
32%
28 V
MMIC Bare Die
Die
No
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
NA
28 V
Evaluation Board
Flange
No
GaN on SiC
8 GHz
11 GHz
25 W
16 dB
36%
28 V
Packaged MMIC
Pill
No
GaN on SiC
8 GHz
11 GHz
30 W
16 dB
36%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
8 GHz
11 GHz
30 W
16 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
9 GHz
10 GHz
35 W
27 dB
45%
40 V
Evaluation Board
Plastic
Yes
GaN on SiC
8 GHz
12 GHz
35 W
19 dB
36%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
9 GHz
10 GHz
35 W
27 dB
45%
40 V
Packaged MMIC
Plastic
Yes
GaN on SiC
9 GHz
10 GHz
35 W
30 dB
45%
28 V
Packaged MMIC
Plastic
Yes
GaN on SiC
9 GHz
10 GHz
40 W
34 dB
38%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
8 GHz
11 GHz
40 W
28 dB
42%
28 V
MMIC Bare Die
Die
Yes
GaN on SiC
9 GHz
10 GHz
40 W
34 dB
NA
28 V
Evaluation Board
Flange
Yes
GaN on SiC
9 GHz
10 GHz
40 W
34 dB
35%
28 V
Packaged MMIC
Flange
Yes
GaN on SiC
7.9 GHz
11 GHz
40 W
27 dB
40%
28 V
Packaged MMIC
Plastic
Yes
GaN on SiC
8.4 GHz
9.6 GHz
50 W
10 dB
NA
40 V
Evaluation Board
Flange
Yes
GaN on SiC
7.9 GHz
9.6 GHz
50 W
10 dB
55%
40 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
DC
18 GHz
70 W
17 dB
60%
40 V
Discrete Bare Die
Die
Yes
GaN on SiC
7.9 GHz
9.6 GHz
100 W
10 dB
NA
40 V
Evaluation Board
Flange
Yes
GaN on SiC
7.9 GHz
9.6 GHz
100 W
10 dB
45%
40 V
Packaged Discrete Transistor
Flange
Yes
GaN on SiC
8.4 GHz
9.6 GHz
130 W
42%
40 V
Packaged Discrete Transistor
Flange
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