| Document Name | Date Updated | Download |
|---|---|---|
|
PTAB182002FC-V1
Version: 5
|
Jan 22, 2019 |
PTAB182002FC-V1
| Peak Output Power | 120W (P1dB) | |
|---|---|---|
| Application | Telecom | |
| Typical Power (Average) | 29 W | |
| Operating Voltage | 28 V | |
| Frequency | 1.805 - 1.88 GHz | |
| Package Type | Earless | |
| Efficiency | 44% | |
| Gain | 15.5 dB | |
| Technology | LDMOS | |
High Power RF LDMOS FET 190 W, 28 V, 1805 – 1880 MHz
SKU: PTAB182002FC-V1
The PTAB182002FC is a 190-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Features
- Asymmetric Doherty design
- Main: P1dB = 70 W Typ
- Peak: P1dB = 120 W Typ
- Broadband internal matching
- Typical two-carrier WCDMA performance at 1842 MHz, 28 V (Doherty configuration)
- Average output power = 44.6 dBm
- Linear Gain = 15.5 dB
- Efficiency = 46%
- IMD = –25 dBc
- Increased negative gate-source voltage range for improved performance in Doherty amplifiers
- Integrated ESD protection
- Capable of handling 3:1 VSWR @ 30 V,50 W (average) output power (one-carrier WCDMA signal, 10 dB PAR, Doherty test fixture)
- Pb-free and RoHS-compliant