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Peak Output Power 120W
Application Telecom
Typical Power (Average) 29 W
Operating Voltage 28 V
Frequency 1.805 - 1.88 GHz
Package Type Earless
Efficiency 44%
Gain 15.5 dB
Technology LDMOS

High Power RF LDMOS FET 190 W, 28 V, 1805 – 1880 MHz

SKU: PTAB182002FC-V1

The PTAB182002FC is a 190-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.


  • Asymmetric Doherty design
    • Main: P1dB = 70 W Typ
    • Peak: P1dB = 120 W Typ
  • Broadband internal matching
  • Typical two-carrier WCDMA performance at 1842 MHz, 28 V (Doherty configuration)
    • Average output power = 44.6 dBm
    • Linear Gain = 15.5 dB
    • Efficiency = 46%
    • IMD = –25 dBc
  • Increased negative gate-source voltage range for improved performance in Doherty amplifiers
  • Integrated ESD protection
  • Capable of handling 3:1 VSWR @ 30 V,50 W (average) output power (one-carrier WCDMA signal, 10 dB PAR, Doherty test fixture)
  • Pb-free and RoHS-compliant



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