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Peak Output Power 75W (P3dB)
Application Telecom
Typical Power (PSAT) 5
Operating Voltage 28 V
Frequency 1.805 - 2.17 GHz
Package Type Earless
Efficiency 43 %
Gain 16 dB
Technology LDMOS

High Power RF LDMOS FET
80 W, 28 V, 1805 – 2170 MHz

SKU: PTAC210802FC-V1


The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. Features include dual-path design, input matching, high gain and thermally enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features

  • Asymmetrical design
    • Main: P1dB = 19 W Typ
    • Peak: P1dB = 60 W Typ
  • Broadband internal matching
  • Wide video bandwidth
  • Broadband internal matching
  • Typical CW pulsed performance, 2170 MHz, 28 V (Doherty fixture)
    • Output power @ P3dB = 75 W
    • Efficiency = 48%
    • Gain Gain @ P3dB = 14 dB
    • ACPR = –34 dBc @ 5 MHz
  • Typical CW pulsed performance, 1880 MHz, 28 V (Doherty fixture)
    • Output power @ P1dB = 45 W
    • Output power @ P3dB = 80 W
    • Efficiency = 48%
    • Gain@ P3dB = 14 dB
  • Capable of handling 10:1 VSWR @28 V, 80 W (CW) output power
  • Integrated ESD protection : Human Body Model, Class 1B (per JESD22-A114)
  • Pb-free and RoHS compliant

Documents