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PTFB09090

High Power RF LDMOS FET 90 W; 28 V; 920 – 960 MHz
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The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced packages. Manufactured with Wolfspeed’s advanced LDMOS process; these devices provide excellent thermal performance and superior reliability.

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P3dB Output Power
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Operating Voltage
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PTFB09090
Yes
LDMOS
0.92 GHz
0.96 GHz
90 W
40%
28 V
Bolt Down, Earless
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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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