PTFB09090

High Power RF LDMOS FET 90 W; 28 V; 920 – 960 MHz

DISCONTINUED

The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced packages. Manufactured with Wolfspeed’s advanced LDMOS process; these devices provide excellent thermal performance and superior reliability.

Product SKU	Buy Online	Recommended For New Design?	Technology	Frequency Min	Frequency Max	P3dB Output Power	Efficiency	Operating Voltage	Package Type
PTFB09090		Yes	LDMOS	0.92 GHz	0.96 GHz	90 W	40%	28 V	Bolt Down, Earless

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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.

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Communications Infrastructure

Wolfspeed RF GaN meets 5G demands on PA design

Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.

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Communications Infrastructure

Resolving mMIMO PA Design Challenges

Massive multiple-input-multiple output (mMIMO) system designers are being challenged to improve system efficiency. Balancing wideband linearity with efficiency is a requirement to fit the size, weight, and power requirements of mMIMO systems. View the whitepaper from Wolfspeed and Analog Devices.

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