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Peak Output Power 150W (P1dB)
Application Telecom
Typical Power (PSAT) 32
Operating Voltage 30 V
Frequency 2.11 - 2.17 GHz
Package Type Earless
Efficiency 29 %
Gain 18 dB
Technology LDMOS

High Power RF LDMOS FET
150 W, 2110 – 2170 MHz

SKU: PTFB211503FL-V2


The PTFB211503FL is a thermally-enhanced, 150-watt, LDMOS FET designed for cellular power amplifier applications in the 2110 to 2170 frequency band. Features include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features

  • Broadband internal matching
  • Enhanced for use in DPD error correction systems
  • Typical CW performance, 2170 MHz, 30 V
    • Average output power = 25 W
    • Linear Gain = 18.5 dB
    • Efficiency = 32.5%
    • Adjacent channel power = –37 dBc
  • Typical CW performance, 2170 MHz, 28 V
    • Output power at P1dB = 150 W
    • Efficiency = 55%
  • Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers
  • Integrated ESD protection
  • Capable of handling 10:1 VSWR @ 30 V, 150 W (CW) output power
  • Pb-free and RoHS compliant

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