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Peak Output Power 300W
Application Telecom
Typical Power (PSAT) 60
Operating Voltage 30 V
Frequency 2.11 - 2.17 GHz
Package Type Earless
Efficiency 26.5 %
Gain 18 dB
Technology LDMOS

High Power RF LDMOS FET
300 W, 2110 – 2170 MHz

SKU: PTFB213004F-V2


The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band. Features include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package.

Features

  • Broadband internal matching
  • Enhanced for use in DPD error correction systems
  • Wide video bandwidth
  • Typical single-carrier WCDMA performance at 2170 MHz, 30 V
    • POUT = 49.5 dBm Avg
    • Gain = 17.5 dB
    • Efficiency = 30%
  • Increased negative gate-source voltage range for improved performance in Doherty amplifiers
  • Capable of handling 10:1 VSWR @ 30 V, 300 W (CW) output power
  • Excellent thermal stability
  • Integrated ESD protection
  • Pb-free and RoHS-compliant

Documents