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PTFC262157FH V1

PTFC262157FH-V1

High Power RF LDMOS FET 200 W; 28 V; 2620 – 2690 MHz
NOTE: Discontinued.

The PTFC262157FH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for maximum performance as the peak side transistor in a Doherty amplifier. Other features include a thermally-enhanced package with earless flange. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
PTFC262157FH-V1
Discontinued
LDMOS
2.3 GHz
2.7 GHz
50 W
19.5 dB
29%
28 V
Earless
Features
  • Broadband internal matching; optimized for Doherty peak side
  • Wide video bandwidth
  • Typical single-carrier WCDMA performance; 2690 MHz; 28 V; 10 dB PAR @ 0.01% CCDR: Output power at P1dB = 50 W; Efficiency = 29%; Gain = 19.5 dB; ACPR = –31.5 dBc at 2690 MHz
  • Capable of handling 10:1 VSWR @ 28 V; 180 W (CW) output power
  • Integrated ESD protection
  • Pb-free and RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers
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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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