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PTFC270051M V2

PTFC270051M-V2

High Power RF LDMOS FET 5 W; 28 V; 900 – 2700 MHz
NOTE: Discontinued.

The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain; efficiency and linearity performance in a small overmolded plastic package.

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
PTFC270051M-V2
Discontinued
LDMOS
0.9 GHz
2.7 GHz
7.3 W
20 dB
60%
28 V
Surface Mount
Features
  • Unmatched
  • Typical CW performance; 940 MHz; 28 V: Output power (P1dB) = 6.5 W; Gain = 23 dB; Efficiency = 62%
  • Typical CW performance; 2655 MHz; 28 V: Output power (P1dB) = 7.3 W; Gain = 19.9 dB; Efficiency = 59.5%
  • Capable of handling 10:1 VSWR @ 28 V; 5 W (CW) output power
  • Integrated ESD protection: Human Body Model Class 1A (per JESD22-A114)
  • Pb-free and RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers
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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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