Contact
中文
Home
PTFC270051M V2

PTFC270051M-V2

son-10-1_va
High Power RF LDMOS FET 5 W; 28 V; 900 – 2700 MHz

The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain; efficiency and linearity performance in a small overmolded plastic package.

Product SKU
Buy Online
Data Sheet
Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
PTFC270051M-V2
LDMOS
0.9 GHz
2.7 GHz
7.3 W
20 dB
60%
28 V
Surface Mount
Product SKU
Buy Online
Data Sheet
Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
PTFC270051M-V2
LDMOS
0.9 GHz
2.7 GHz
7.3 W
20 dB
60%
28 V
Surface Mount
Features
  • Unmatched
  • Typical CW performance; 940 MHz; 28 V: Output power (P1dB) = 6.5 W; Gain = 23 dB; Efficiency = 62%
  • Typical CW performance; 2655 MHz; 28 V: Output power (P1dB) = 7.3 W; Gain = 19.9 dB; Efficiency = 59.5%
  • Capable of handling 10:1 VSWR @ 28 V; 5 W (CW) output power
  • Integrated ESD protection: Human Body Model Class 1A (per JESD22-A114)
  • Pb-free and RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers
Apply Filters
Document Type
Document Name
Application Notes
Application Notes
Data Sheets
Reference Designs
Product Catalog
Sales Sheets & Flyers
Sales Terms
Document Type
Document Name
Application Notes
Application Notes
Data Sheets
Reference Designs
Product Catalog
Sales Sheets & Flyers
Sales Terms
Need information?
Ready to buy?
Find a Distributor
Want to keep in touch?

Knowledge Center

View All
highpower_wideband_lband_image
GaN on SiC

Thermal Considerations for X-Band MMICs Under CW Operation

Join Kasyap Patel of Wolfspeed for a live webinar on September 20th as we discuss GaN on SiC MMIC solutions to thermal concerns for next generation radar systems during continuous wave (CW) operation.
Register Now 
 Webinars
Jamming man-portable pack2
GaN on SiC

Countering RCIEDs with GaN’s Bandwidth & Power Density Advantages

Counter-RCIED devices used by the military and law enforcement rely on jamming wireless trigger signals. This article will discuss how GaN’s high-temperature reliability and power density capability enables jammer equipment to meet system SWaP-C requirements.
Continue Reading 
 Blog
RF PA 101_amplifier classes image
GaN on SiC

RF Power Amplification 101: Amplifier Classes

The purpose of the RF PA is to increase the power of the RF input signal. This is achieved by applying the signal to the gate. This article compares some of the common amplifier classes, starting with the most-linear but least-efficient Class A to the still-linear (due to the ideal transistor) but more-efficient Class F and inverse-F.
Continue Reading 
 Technical Articles
Cree Wolfspeed Logo
FacebookTwitterLinkedInYouTube
  • Contact
  • Where to Buy
  • Document Library
  • Knowledge Center
  • News
  • Events
  • Privacy Policy
  • Terms of Use
Copyright © 2021 Cree Wolfspeed