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High Power RF LDMOS FET 10 W; 28 V; 900 – 2700 MHz
NOTE: Not recommended for new designs.

The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain; efficiency and linearity performance in a small overmolded plastic package.

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Frequency Min
Frequency Max
P3dB Output Power
Operating Voltage
Package Type
0.9 GHz
2.7 GHz
12 W
20 dB
28 V
Surface Mount
  • Unmatched input and output
  • Typical CW performance; 2170 MHz; 28 V: Output power @ P1dB = 10 W; Gain = 20 dB; Efficiency = 60%
  • Typical two-carrier WCDMA performance; 2170 MHz; 28 V; 8 dB PAR: Output power = 1.3 W avg; Gain = 21 dB; Efficiency = 21%; ACPR = –44.9 dBc @ 5 MHz
  • Capable of handling 10:1 VSWR @ 28 V; 10 W (CW) output power
  • Integrated ESD protection
  • Pb-free and RoHS compliant
  • Multi-standard Cellular Power Amplifiers
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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