PTRA087008NB-V1

High Power RF LDMOS FET 650 W; 48 V; 755 – 805 MHz

The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

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PTRA087008NB-V1

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PTRA087008NB-V1

Product SKU	Buy Online	Data Sheet	Recommended For New Design?	Technology	Frequency Min	Frequency Max	P3dB Output Power	Gain	Efficiency	Operating Voltage	Package Type
PTRA087008NB-V1			Yes	LDMOS	0.5 GHz	1 GHz	380 W	18.5 dB	52%	48 V	Plastic

Features

Broadband internal input and output matching
Asymmetric design: Main P1dB = 245 W Typ; Peak P1dB = 380 W Typ
Typical pulsed CW performance; 805 MHz; 48 V; Doherty configuration: Output power at P3dB = 650 W; Efficiency = 52%; Gain = 19.5 dB
Capable of handling 10:1 VSWR @48 V; 30 W (WCDMA) output power
Integrated ESD protection
RoHS compliant

Applications

Multi-standard Cellular Power Amplifiers

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PTRA087008NB-V1

Products

PTRA087008NB-V1

PTRA087008NB-V1

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.css-1nrupg7{color:currentColor;}.css-1nrupg7::before{content:"";position:absolute;top:0;left:0;width:100%;height:100%;z-index:1;}Thermal Considerations for High-Power GaN RF Amplifiers

Thermal Considerations for High-Power GaN RF Amplifiers