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PTRA095908NB V1

PTRA095908NB-V1

High Power RF LDMOS FET; 520 W; 48 V; 925 - 960 MHz

The PTRA095908NB is a 520-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced plastic overmold package with earless flange.

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
PTRA095908NB-V1
Yes
LDMOS
0.92 GHz
0.96 GHz
460 W
17.5 dB
52%
48 V
Surface Mount
Features
  • Broadband internal input and output matching
  • Asymmetric Doherty design
    • Main: P1dB = 250 W Typ
    • Peak: P1dB = 400 W Typ
  • Typical pulsed CW performance; 942 MHz; 48 V; Doherty configuration; 10 μs; 10% duty cycle
    • Output power at P1dB = 160 W
    • Output power at P3dB = 520 W
    • Efficiency = 58% (POUT = 109 W)
    • Gain = 19 dB (POUT = 109 W)
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Radar / Avionics

Improving Pulse Fidelity in RF Power Amplifiers

A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
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