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PTVA04250

High Power RF LDMOS FETs 250 W; 50 V; 470 – 806 MHz

The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down or earless flanges. Manufactured with Wolfspeed’s advanced LDMOS process; these devices provide excellent thermal performance and superior reliability.

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Technology
Frequency Min
Frequency Max
Peak Output Power
Gain
Efficiency
Operating Voltage
Form
Package Type
PTVA042502EC-V1
Yes
LDMOS
0.47 GHz
0.806 GHz
250 W
19 dB
26%
50 V
Packaged Discrete Transistor
Bolt Down
PTVA042502FC-V1
Yes
LDMOS
0.47 GHz
0.806 GHz
250 W
19 dB
26%
50 V
Packaged Discrete Transistor
Earless
Features
  • Input matched
  • Integrated ESD protection
  • Human Body Model Class 1C (per ANSI/ESDA/JEDEC JS-001)
  • Low thermal resistance
  • RoHS compliant
  • Capable of withstanding a 10:1 VSWR at 55W average power under DVB-T signal condition
Applications
  • Power Amplifiers in the 470 – 806 MHz frequency band
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Knowledge Center

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RF
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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