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High Power RF LDMOS FET 240 W; 48 V; 869 – 960 MHz

The PTVA092407NF is a 240-watt LDMOS FET manufactured with Wolfspeed’s 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single ended design and input and output matching that allow for use from 869 MHz to 960 MHz. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

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Frequency Min
Frequency Max
P3dB Output Power
Operating Voltage
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0.5 GHz
1 GHz
287 W
22.5 dB
48 V
  • Broadband internal input and output matching
  • Typical CW performance; 960 MHz; 48 V; single side: Output power at P1dB = 240 W; Output power at P3dB = 287 W; Gain = 20 dB; Efficiency = 62%
  • Capable of handling 10:1 VSWR @ 48 V; 80 W CW output power
  • Integrated ESD protection
  • Human Body Model class 2 (per ANSI/ESDA/ JEDEC JS-001)
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Multi-standard Cellular Power Amplifiers
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Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
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