Features
- Input matched
- Capable of handling 10:1 VSWR @50 V; 200 W (CW) output power
- Integrated ESD protection
- Low thermal resistance
- Pb-free and RoHS compliant
PTVA102001EA-V1
High Power RF LDMOS FET 200 W; 50 V; 960 – 1600 MHz
The PTVA102001EA is a 200-watt LDMOS FET intended for use in power amplifier applications in the 960 to 1600 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process; this device provides excellent thermal performance and superior reliability.
Products
PTVA102001EA-V1
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PTVA102001EA-V1
Product SKU | Buy Online | Request Sample | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PTVA102001EA-V1 | Yes | LDMOS | 0.96 GHz | 1.6 GHz | 200 W | 18.5 dB | 60% | 50 V | Packaged Discrete Transistor | Bolt Down |
Applications
- Power Amplifiers in the 960 to 1600 MHz frequency band
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name |
|---|---|
| Data Sheets | |
| Reference Designs | |
| Product Catalog | |
| Sales Terms |
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