Features
- Broadband internal input and output matching
- High gain and efficiency
- Integrated ESD protection
- Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
- Low thermal resistance
- Excellent ruggedness
- Pb-free and RoHS compliant
PTVA104501EH-V1
High Power RF LDMOS FET 450 W; 50 V; 960 – 1215 MHz
The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process; this device provides excellent thermal performance and superior reliability.
Products
PTVA104501EH-V1
No filters selected, showing all 1 products
PTVA104501EH-V1
Product SKU | Buy Online | Data Sheet | Recommended For New Design? | Technology | Frequency Min | Frequency Max | Peak Output Power | Gain | Efficiency | Operating Voltage | Form | Package Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
PTVA104501EH-V1 | Yes | LDMOS | 0.96 GHz | 1.215 GHz | 450 W | 17.5 dB | 58% | 50 V | Packaged Discrete Transistor | Bolt Down |
Applications
- Power Amplifiers in the 960 to 1215 MHz frequency band
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
Documents
Document Type | Document Name |
|---|---|
| Data Sheets | |
| Reference Designs | |
| Product Catalog | |
| Sales Terms |
Knowledge Center
Continue Reading Technical Articles
Wolfspeed RF GaN meets 5G demands on PA design
Wolfspeed GaN on SiC products can replace inefficient silicon parts in 5G cellular transmitter amplifiers, achieving higher linearization, greater power density and improved thermal conductivity.
Continue Reading Technical Articles
Improving Pulse Fidelity in RF Power Amplifiers
A radar system designer’s most coveted objectives are achieving a long range, adequate resolution to distinguish objects in close proximity to each other, and the ability to not only determine target velocities but target types in order to help differentiate friendlies from adversaries.A combination of both approaches is essential, and engineers can design for peak power points of the load-pull simulation while also paying attention to other parts of the circuit for baseband signal fidelity.
Continue Reading Technical Articles