| Document Name | Date Updated | Download |
|---|---|---|
|
PXAC213308FV-V1
Version: 3
|
Jan 22, 2019 |
PXAC213308FV-V1
| Peak Output Power | 320W (P3dB) | |
|---|---|---|
| Application | Telecom | |
| Operating Voltage | 28 V | |
| Frequency | 1.8 - 2.2 GHz | |
| Package Type | Earless | |
| Efficiency | 43.5% | |
| Gain | 16.5 dB | |
| Technology | LDMOS | |
High Power RF LDMOS FET 320 W, 28 V, 2110 – 2200 MHz
SKU: PXAC213308FV-V1
The PXAC213308FV is a 320-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2100 to 2200 MHz frequency band. Features include dual-path design, broadband matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Features
- Broadband internal input and output matching
- Asymmetrical Doherty design
- Main : P1dB = 140 W Typ
- Peak : P1dB = 190 W Typ
- Typical Pulsed CW performance, 2170 MHz, 28 V, combined outputs
- Output power at P3dB = 320 W
- Efficiency = 53% @ P3dB
- Gain = 16 dB@ P3dB
- Capable of handling 10:1 VSWR @ 28 V, 170 W CW output power
- Integrated ESD protection
- Low thermal resistance
- Pb-free and RoHS compliant