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PXAD214218FV-V1

High Power RF LDMOS FET 430 W; 28 V; 2110 – 2170 MHz
NOTE: Not recommended for new designs.

The PXAD214218FV is a 430-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include dual-path design; input and output matching; high gain and thermally-enhanced package with earless flanges. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

PXAD214218FV-V1

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Recommended For New Design?
Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
PXAD214218FV-V1
No
LDMOS
1.8 GHz
2.3 GHz
436 W
16 dB
48.7%
28 V
Earless
Features
  • Broadband internal input and output matching
  • Asymmetrical Doherty design: Main P1dB = 130 W Typ; Peak P1dB = 290 W Typ
  • Typical Pulsed CW performance; 2140 MHz; 28 V; Doherty configuration: Output power at P3dB = 436 W; Efficiency = 55%; Gain = 13.5 dB
  • Capable of handling 10:1 VSWR @28 V; 110 W (WCDMA) output power
  • Integrated ESD protection
  • Pb-free and RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers

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