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PXAE183708NB-V1

High Power RF LDMOS FET 320 W; 28 V; 1805 – 1880 MHz

The PXAE183708NB is a 320-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

PXAE183708NB-V1

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Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
PXAE183708NB-V1
Yes
LDMOS
1.8 GHz
2.2 GHz
315 W
16 dB
50.5%
28 V
Plastic
Features
  • Broadband internal input and output matching
  • Asymmetrical Doherty design: Main P3dB = 160 W Typ; Peak P3dB = 315 W Typ
  • Typical Pulsed CW performance; 1880 MHz; 28 V; Doherty configuration; Class AB (main); Class C (peak): Output power at P1dB = 320 W; Output power at P3dB = 430 W; Drain efficiency = 60%; Gain = 13.5 dB
  • Capable of handling 10:1 VSWR @ 28 V; 54 W (1C WCDMA) output power
  • Pb-free; RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers

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