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PXAE213708NB V1

PXAE213708NB-V1

hb2sof-8-1_va_1_1
High Power RF LDMOS FET 400 W; 28 V; 2110 – 2200 MHz

The PXAE213708NB is a 400-watt (P3dB) LDMOS Doherty transistor intended for use in multi-standard cellular power amplifier applications in the 2110 to 2200 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
PXAE213708NB-V1
Yes
LDMOS
2.11 GHz
2.2 GHz
290 W
16 dB
52%
28 V
Surface Mount
Product SKU
Buy Online
Data Sheet
Recommended For New Design?
Technology
Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
PXAE213708NB-V1
Yes
LDMOS
2.11 GHz
2.2 GHz
290 W
16 dB
52%
28 V
Surface Mount
Features
  • Broadband internal input and output matching
  • Asymmetrical Doherty design: Main P3dB = 160 W Typ; Peak P3dB = 290 W Typ
  • Typical Pulsed CW performance; 2180 MHz; 28 V; Doherty configuration; class AB: Output power at P3dB = 400 W; Power Added Efficiency at P3dB = 60.3%; Power Gain = 13.7 dB
  • Integrated ESD protection
  • Pb-free and RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers
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