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PXAE263708NB-V1

High Power RF LDMOS FET 400 W (P3dB); 28 V; 2620 – 2690 MHz

The PXAE263708NB is a 400-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching; high gain and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

PXAE263708NB-V1

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Frequency Min
Frequency Max
P3dB Output Power
Gain
Efficiency
Operating Voltage
Package Type
PXAE263708NB-V1
Yes
LDMOS
2.62 GHz
2.69 GHz
400 W
13.5 dB
47%
28 V
Plastic
Features
  • Broadband internal input and output matching
  • Asymmetric Doherty design: Main P1dB = 140 W Typ; Peak P1dB = 260 W Typ
  • Typical pulsed CW performance; 2655 MHz; 28 V; Doherty configuration; class AB: Output power at P1dB = 200 W; Output power at P3dB = 400 W; Efficiency = 49% (POUT = 57 W avg); Gain = 15 dB (POUT = 57 W avg)
  • Capable of handling 10:1 VSWR @ 32 V; 100 W (CW) output power
  • Integrated ESD protection
  • Pb-free and RoHS compliant
Applications
  • Multi-standard Cellular Power Amplifiers

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