Skip to Main Content
浏览产品 (中文)


High Power RF LDMOS FET 400 W (P3dB); 28 V; 2620 – 2690 MHz

The PXAE263708NB is a 400-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching; high gain and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed’s advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

Product SKU
Buy Online
Data Sheet
Recommended For New Design?
Frequency Min
Frequency Max
P3dB Output Power
Operating Voltage
Package Type
2.62 GHz
2.69 GHz
400 W
13.5 dB
28 V
  • Broadband internal input and output matching
  • Asymmetric Doherty design: Main P1dB = 140 W Typ; Peak P1dB = 260 W Typ
  • Typical pulsed CW performance; 2655 MHz; 28 V; Doherty configuration; class AB: Output power at P1dB = 200 W; Output power at P3dB = 400 W; Efficiency = 49% (POUT = 57 W avg); Gain = 15 dB (POUT = 57 W avg)
  • Capable of handling 10:1 VSWR @ 32 V; 100 W (CW) output power
  • Integrated ESD protection
  • Pb-free and RoHS compliant
  • Multi-standard Cellular Power Amplifiers
Apply Filters
Document Type
Document Name
Application Notes
Data Sheets
Reference Designs
Product Catalog
Sales Sheets & Flyers
Sales Terms
Need information?
Buy Online
Find a Distributor
Stay Informed

Knowledge Center

View All
Aerospace & Defense

Thermal Considerations for High-Power GaN RF Amplifiers

Many RF applications require very long lifetimes with typical military and telecom use cases demanding more than 10 years of operation. Junction temperature Tj, or the temperature of the base semiconductor in the device, plays an important role in device reliability as does the substrate material in keeping the base semiconductor cool.
Continue Reading 
 Technical Articles


Wolfspeed Logo

Social Media

  • Facebook
  • Twitter
  • LinkedIn
  • YouTube
Copyright © 2022 Wolfspeed, Inc.