|Features||G28V3 MMIC||G28/40V4 MMIC||G50V3 MMIC|
|Bias||28V||28V to 40V||50V|
|Density||4.5 W/mm||6 W/mm||8 W/mm|
|Performance||DC - 8 GHz||DC - 18 GHz||DC - 6 GHz|
|Dual metal 3 µm-thick interconnects||·||·||·|
|Thin film & bulk resistors||·||·||·|
|MIM Capacitors >100V||·||·||·|
|Slot substrate vias||·||·||·|
|Power FETs & Switch FETs||·||·||·|
Foundry GaN HEMT MMICs
GaN HEMT MMICs
More bands than Woodstock.
Wolfspeed’s GaN HEMT MMICs deliver more frequency bands per amplifier, but that’s not all. Count on longer detection ranges, improved target discrimination and longer lifetimes than outmoded TWT technology. Our development and production processes focus on two basic families: a 0.4-μm gate-length HEMT that can be operated at drain bias of 28 to 50 V and a 0.25-μm gate-length HEMT that can be operated at 28 to 40 V. There are competitively priced options for dedicated and shared masks. Time to get on the Wolfspeed bandwagon.