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Foundry GaN HEMT MMICs

More bands than Woodstock.

Wolfspeed’s GaN HEMT MMICs deliver more frequency bands per amplifier, but that’s not all. Count on longer detection ranges, improved target discrimination and longer lifetimes than outmoded TWT technology. Our development and production processes focus on two basic families: a 0.4-μm gate-length HEMT that can be operated at drain bias of 28 to 50 V and a 0.25-μm gate-length HEMT that can be operated at 28 to 40 V. There are competitively priced options for dedicated and shared masks. Time to get on the Wolfspeed bandwagon.

Trusted Foundry Graphic
Manufacturing Readiness Level Graphic

GaN HEMT MMIC process components

GaN HEMT MMIC process components
FeaturesG28V3 MMICG28/40V4 MMICG50V3 MMIC
Gate length 0.4µm 0.25µm 0.4µm
Bias 28V 28V to 40V 50V
Breakdown >120V >120V >120V
Density 4.5 W/mm 6 W/mm 8 W/mm
Performance DC - 8 GHz DC - 18 GHz DC - 6 GHz
Dual metal 3 µm-thick interconnects · · ·
Thin film & bulk resistors · · ·
MIM Capacitors >100V · · ·
Slot substrate vias · · ·
Power FETs & Switch FETs · · ·

We want to put our years of GaN experience to work for you.