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Peak Output Power 80W
Application General-Purpose Broadband, 28 V
Typical Power (PSAT) 80 W (CW)
Power Gain 12 dB
Operating Voltage 28 V
Frequency 0.5 - 3.0 GHz
Package Type Flange
Small Signal Gain 15 dB
Drain Efficiency 55 %
Internal Matching Yes
Technology GaN on SiC

70-W, 0.5-3.0 GHz, GaN HEMT

SKU: CG2H30070F

Wolfspeed’s CG2H30070F is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input match to deliver the best possible instantaneous broadband performance from 0.5-3.0 GHz. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This device is available in a 2-lead metal/ceramic flanged package for optimal electrical and thermal performance.


  • Input matched for instantaneous operation from 500 – 3000 MHz
  • 70 W (CW) minimum Pout
  • 80 W (CW) typical Pout
  • 16 dB Typical Small Signal Gain
  • 28 V Operation
  • Application Circuit Available using 2x CG2H30070F for 100 W (CW) at 85°C case temperature



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