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Peak Output Power 35W
Application General-Purpose Broadband, 28 V
Operating Voltage 28 V
Frequency DC - 6.0 GHz
Package Type Flange/Pill
Small Signal Gain 14 dB at 3.5 GHz
Drain Efficiency 64% @ PSAT
Technology GaN on SiC

35-W RF Power GaN HEMT

SKU: CG2H40035

Cree’s CG2H40035 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40035 ideal for linear and compressed amplifier circuits. The transistor is available in both a screw-down, flange package and solder-down, pill packages.


  • Up to 6 GHz Operation
  • 40 W Typical PSAT
  • 64% Efficiency at PSAT
  • 14 dB Small Signal Gain at 3.5 GHz
  • 28 V Operation



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